A method of manufacturing a device comprising a PNP bipolar transistor and an NPN bipolar transistor for radio frequency applications

摘要

This text relates to a method of manufacturing a microelectronic device comprising a P-type doped semiconductor substrate (1) and a PNP transistor and an NPN transistor arranged vertically in said substrate (1), said method comprising the following successive steps : - formation of an insulation box (2) doped N + of the PNP transistor in the substrate (1); - formation of a region (3) doped P + in the insulation box (2); - epitaxial growth d 'a first semiconductor layer (10) on the substrate (1); - formation of an N + doped well (5) of the NPN transistor, at least a part of said well (5) extending into the first semi-layer conductive (10); - epitaxial growth of a second semiconductor layer (11) on the first semiconductor layer (10); - formation of a P-doped region (6) capable of forming the collector of the PNP transistor in the second semiconductor layer (11), in electrical connection with the region (3) doped P +; - formation of an N-doped region (7) capable of forming the collector of the NPN transistor in the second semiconductor layer (11), in electrical connection with the N + doped well (5). Figure for the abstract: Fig 10