SEMICONDUCTOR DEVICE HAVING MATRIX WIRING SECTION,AND SEMICONDUCTOR DEVICE USING THE SAME AND HAVING PHOTOELECTRIC CONVERSION FUNCTION

• 1. 用于半导体芯片的具有防焊剂蠕流的焊剂阻挡部的承载装置、具有承载装置的电子器件和具有承载装置的光电子器件 [P] . 中国专利： CN103003965B . 2016.03.16
• 2. 用于半导体芯片的具有防焊剂蠕流的焊剂阻挡部的承载装置、具有承载装置的电子器件和具有承载装置的光电子器件 [P] . 中国专利： CN103003965A . 2013-03-27
• 3. SEMICONDUCTOR DEVICE HAVING MATRIX WIRING SECTION,AND SEMICONDUCTOR DEVICE USING THE SAME AND HAVING PHOTOELECTRIC CONVERSION FUNCTION [P] . 英国专利： GB2228367B . 1993-04-07

  机译： 具有矩阵布线部分的半导体装置，以及具有相同的并且具有光电转换功能的半导体装置

• 4. A semiconductor device with matrix wiring section, and photoelectric conversion function. [P] . NL194140C . 2001-07-03

  机译： 具有矩阵布线部分和光电转换功能的半导体器件。

• 5. Semiconductor device having a plurality of photoelectric conversion elements, a transfer transistor, an amplifying transistor, a reset transistor, and a plurality of wirings defining an aperture of the photoelectric conversion elements [P] . 美国专利： US7838957B2 . 2010-11-23

  机译： 具有多个光电转换元件，转移晶体管，放大晶体管，复位晶体管以及限定光电转换元件的开口的多个布线的半导体装置

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• 3. The outstanding properties of graphene-insulator-semiconductor (GIS) test structures for photoelectric determination of semiconductor devices band diagram [C] . Krzysztof Piskorski, Vikram Passi, Jasper Ruhkopf, 2017 International Conference of Microelectronic Test Structures . 2017
• 4. Studies in Structure and Electrochemistry of Halide Perovskite Semiconductors and Covalently-Functionalized Carbon with Applications in Optoelectronic Devices, Energy Storage, and CO2 Capture [D] . Saldivar Valdes, Abraham. 2018
• 5. Semiconductors: Interface Design Principles for High‐Performance Organic Semiconductor Devices (Adv. Sci. 6/2015) [O] . Wanyi Nie, Gautam Gupta, Brian K. Crone, 2015
• 6. Retraction of “Accurate Prediction of Essential Fundamental Properties for Semiconductors Used in Solar-Energy Conversion Devices from Range-Separated Hybrid Density Functional Theory” [O] . Moussab Harb 2016
• 7. Fiscal Year 2011 Director's Strategic Initiative Final Report Heterogeneous Device Architectures Incorporating Nitride Semiconductors for Enhanced Functionality of Optoelectronic Devices. [R] . Sampath, A. V., Reed, M. L., Gerhold, M., 2014

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