HgCdTe MIS device having a CdTe heterojunction

摘要

A MIS semiconductor device comprises a crystalline substrate having a first energy band gap and a crystalline passivation layer overlying a surface of the substrate. The passivation layer is comprised of a semiconductor material having a wider band gap than the semiconductor material of the substrate. In an illustrative embodiment of the invention a MIS semiconductor device comprises a mercury-cadmium- telluride (HgCdTe) substrate having a cadmium-telluride (CdTe) heterojunction formed thereon, the CdTe functioning as a layer of high- quality passivation. A metal gate insulator may be SiO.sub.2, low temperature CVD Si.sub.3 N.sub.4, or any other suitable insulator deposited at a relatively low temperature.