HGCDTE SEMICONDUCTOR DEVICE AND ITS MANUFACTURE

摘要

PROBLEM TO BE SOLVED: To execute channel stop for electrically separating photodiodes without using a heat processing process by providing a negative processing layer between a coating film in an n-type area with a p-type HgCdTe layer and inducing a p⁺-area just below. ;SOLUTION: Boron is selectively ion-injected in a p-type HgCdTe layer and plural n-type areas 12 are formed so as to constitute a photodiode array. Then, a ZnS protection film is formed on the whole face by an evaporation method and the AnS film is patterned by etching liquid. Then, a channel stop forming area 14 is opened. Then, a thin oxygen plasma processing layer 16 accompanied by oxidation is formed on the exposed face of the p-type HgCdTe layer 11 by using an electronic cyclotron resonance plasma processor. Then, a ZnS film 13 is removed and the SiN film 17 is formed on the whole face by the CVD method. Then, the contact hole 18 is formed by dry etching and In is provided on n-side electrode and Au on a p-side electrode.;COPYRIGHT: (C)1998,JPO