HGCDTE SEMICONDUCTOR DEVICE AND ITS MANUFACTURE

摘要

PURPOSE: To prevent the stripping off of a passivation film having a good insulating property so as to prevent the deterioration of the electrical characteristic of an HgCdTe semiconductor device by protecting the surface of an HgCdTe substrate with a protective film and forming the passivation film near a contact hole separately from the protective film. ;CONSTITUTION: An n-type area 2 is formed by introducing an n-type impurity to part of one main surface of a p-type HgCdTe substrate 1 and a p-n junction is formed between the area 2 and substrate 1. The part which passivates the p-n junction is coated with a ZnS film 4a through an anodic sulfide film 3. In addition, the remaining part of the main surface of the substrate 1 is coated with the ZnS film 4a through the sulfide film 3. In the n-type area 2 of this photodiode, the electrode metal 8a of an ohmic-connected cathode is fitted to the n-type area 2 in the opening of the ZnS film 4a/anodic sulfide film 3 in a state where the metal 8a is surrounded by a CdTe film 12a. The CdTe film 12a also covers the surface of the ZnS film 4a/anodic sulfide film 3.;COPYRIGHT: (C)1996,JPO