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Process for making BiCMOS integrated circuit having a shallow trench bipolar transistor with vertical base contacts
Process for making BiCMOS integrated circuit having a shallow trench bipolar transistor with vertical base contacts
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机译:具有具有垂直基极接触的浅沟槽双极晶体管的BiCMOS集成电路的制造工艺
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摘要
An improved bipolar transistor of a BiCMOS integrated circuit is fabricated by utilizing a shallow trench structure. The shallow trench defines an active base and a self-aligned emitter. The base resistance of the transistor is reduced because a vertical, rather than lateral, link base, which connects an extrinsic base to the active base, is formed. In addition, the overall area is reduced, which provides for a lower collector to base capacitance.
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