首页> 外国专利> PROTECTIVE DEVICE FOR BREAKDOWN OF BIDOLAR TRANSISTOR IN INTEGRATION DRIVING CIRCUIT FOR POWER DEVICE HAVING RESONANT LOAD ON COLLECTOR SIDE

PROTECTIVE DEVICE FOR BREAKDOWN OF BIDOLAR TRANSISTOR IN INTEGRATION DRIVING CIRCUIT FOR POWER DEVICE HAVING RESONANT LOAD ON COLLECTOR SIDE

机译:在集电器侧产生谐振负载的电力驱动装置的集成驱动电路中,双极晶体管发生故障的保护装置

摘要

PURPOSE: To surely enable setting a transistor itself to be protected, to a value lower than its ignition threshold by providing automatic commutating means between the base of the transistor and the collectors of power devices, and when the collector voltage of a power device drops from a preset value, generating currents associated with lower voltage drops between the base and collectors. CONSTITUTION: Automatic commutating means QP1 and QP2, which generate currents associated with low-voltage drops between the base of a transistor Q2 to be protected and collectors of power devices Q3 and Q4, when the collector voltage of a power device 1 drops from a preset value are provided between the base and collectors. When the collector voltage Vc of the device 1 drops from a preset value, a current having a small value and associated with a low-voltage drop flows to the collector of the device 1 from the base of the transistor Q2 through the means QP1 and QP2, so as to maintain the base/emitter voltage of the transistor Q2 at a value which is not higher than the conducting threshold of the transistor Q2. Therefore, the transistor Q2 to be protected is surely protected, so as to automatically set the transistor Q2 to a value lower than its ignition threshold.
机译:目的:通过在晶体管的基极和功率器件的集电极之间以及功率器件的集电极电压下降时提供自动换向装置,确保将晶体管本身设置为低于其点火阈值的值。预设值,产生与基极和集电极之间的低压降相关的电流。组成:自动换向装置QP1和QP2,当功率器件1的集电极电压从预设值下降时,它们会产生与要保护的晶体管Q2的基极和功率器件Q3和Q4的集电极之间的低压降相关的电流。在基极和收集器之间提供值。当器件1的集电极电压Vc从预设值下降时,具有小值并且与低压降相关的电流从晶体管Q2的基极通过装置QP1和QP2流向器件1的集电极。 ,以将晶体管Q2的基极/发射极电压维持在不高于晶体管Q2的导通阈值的值。因此,可靠地保护了要保护的晶体管Q2,从而将晶体管Q2自动设置为低于其点火阈值的值。

著录项

  • 公开/公告号JPH02304960A

    专利类型

  • 公开/公告日1990-12-18

    原文格式PDF

  • 申请/专利权人 SGS THOMSON MICROELETTRONICA SPA;

    申请/专利号JP19900111896

  • 发明设计人 SERUJIO PARAARA;SARUBATOORE RACHITEI;

    申请日1990-05-01

  • 分类号H01L29/73;H01L21/331;H01L27/02;H01L27/06;H01L29/732;H03K17/082;

  • 国家 JP

  • 入库时间 2022-08-22 06:01:51

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