Thin film making method on semiconductor substrate and temperature controlling systems therefor

摘要

When a thin film is formed on a semiconductor substrate (9) by making the film forming particles and the charged particles incident on the substrate (9) as in bias-sputtering, the temperature of the semiconductor substrate (9) during thin film formation can be maintained at a desired temperature by measuring the incident heat amount on the semiconductor substrate (9) as well as introducing a rare gas (14) between the semiconductor substrate (9) and a substrate supporting member (10) on which the semiconductor substrate (9) is mounted and then controlling the pressure of the introduced gas (14) in correspondence with the heat amount measured. The thin film formed in this way has high quality and low speoific resistance as well.