Single-Crystal Films of Semiconductors on Amorphous Substrates Via a Low Temperature Graphoepitaxy

摘要

The objective of this program was to carry out basic research on the phenomenon of surface energy driven secondary grain growth (SEDSGG) in thin films on amorphous substrates with surfaces which were planar as well as surfaces with artificial topography. Means of enhancing grain boundary mobility, such as ion bombardment, doping, and rapid thermal annealing were investigated. Theoretical models for SEDSGG were developed. The role of surface energy and surface topography in SEDSGG was characterized and understood. (mjm)