Cleaning process for removal of deposits from the susceptor of a chemical vapor deposition apparatus

摘要

An improved process is disclosed for the removal of deposits such as tungsten or tungsten silicide from a susceptor in a vacuum deposition chamber without leaving fluorine residues by first flowing a gas­eous source of fluorine into a vacuum deposition chamber and igniting a plasma in the chamber while the gaseous source of fluorine is flowing therein to remove the depositions followed by flowing a gaseous source of hydrogen into the chamber and maintaining a plasma in the chamber during the flow of the gaseous source of hydrogen to remove any fluorine residues from the chamber.