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Level converter circuit with two MOSFET(s) - has drain electrode of third MOSFET coupled to drain-source path of second MOSFET

机译:带有两个MOSFET的电平转换器电路-将第三个MOSFET的漏极连接到第二个MOSFET的漏源路径

摘要

The CMOS inverter consists of two MOSFETs (T1,2), in which the first MOSFET (T1) source electrode is coupled to a first operating voltage source (UEE). A third MOSFET (T3) drain electrode is coupled to the second MOSFET (T2) source drain path. The third MOSFET gate electrode is coupled to its drain electrode. The third MOSFET source electrode is connected to a second operating voltage source (USS). The second and third MOSFETs are of an identical channel type. Pref. the first MOSFET is of a p-channel type, with the third and second MOSFETs of an n-channel type. ADVANTAGE - TTL compatibility, and mfr. by standard CMOS process.
机译:CMOS反相器由两个MOSFET(T1,2)组成,其中第一MOSFET(T1)源电极耦合到第一工作电压源(UEE)。第三MOSFET(T3)漏电极耦合到第二MOSFET(T2)源漏路径。第三MOSFET栅电极耦合到其漏电极。第三MOSFET源极连接到第二工作电压源(USS)。第二和第三MOSFET具有相同的沟道类型。首选第一MOSFET为p沟道型,第三和第二MOSFET为n沟道型。优势-TTL兼容性和mfr。通过标准的CMOS工艺。

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