The CMOS inverter consists of two MOSFETs (T1,2), in which the first MOSFET (T1) source electrode is coupled to a first operating voltage source (UEE). A third MOSFET (T3) drain electrode is coupled to the second MOSFET (T2) source drain path. The third MOSFET gate electrode is coupled to its drain electrode. The third MOSFET source electrode is connected to a second operating voltage source (USS). The second and third MOSFETs are of an identical channel type. Pref. the first MOSFET is of a p-channel type, with the third and second MOSFETs of an n-channel type. ADVANTAGE - TTL compatibility, and mfr. by standard CMOS process.
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