A semiconductor circuits integrated a device comprising a deep groove filled with an insulating material and method of manufacturing such a device.

摘要

Device is a semiconductor circuits integrated and a method of manufacturing such a device. / p & & p & this device comprises a semiconductor body 100, an electrically insulating region 3 a plurality of semiconductor regions of said body and which is formed of a groove extending, with a constant width, at the interior of the main surface of the semiconductor body which is filled with a filling material 4, the semiconductor elements 19, 20, 21 forms in the materials of the semiconductor regions, of the oxide films thick 70, 71, 72 formed in the various semiconductor regions and layers of wiring 33, 34 interconnecting the semiconductor elements forms in the semiconductor regions. / p & & p & application in particular to the ram memoires prom and