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Growth of III-V films by control of MBE growth front stoichiometry
Growth of III-V films by control of MBE growth front stoichiometry
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机译:通过控制MBE生长前沿化学计量来生长III-V膜
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摘要
For the growth of strain-layer materials and high quality single and multiple quantum wells, the instantaneous control of growth front stoichiometry is critical. The process of the invention adjusts the offset or phase of MBE control shutters to program the instantaneous arrival or flux rate of In and As.sub.4 reactants to grow InAs. The interrupted growth of first In, then As.sub.4, is also a key feature.
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