In-situ Control of Stoichiometry in Room Temperature MBE-Growth of ZrO_2 Thin Films Using a Novel Hyperthermal Oxygen Atom Source

摘要

Thin ZrO_2 films have been grown on Si(100) oriented substrates using standard MBE-methods. In-situ oxidation of the films was accomplished using a novel oxygen source which produces highly reactive hyperthermal atomic oxygen with a flux density of > 10~(15) atoms/cm~2s at background pressures below 10~(-7) Pa. Stochiometry of the oxide thin films can be controlled by varying either atom flux or zirconium evaporation rate. The grown films were analyzed using RBS, XPS and GIXRD.