A PROCESS FOR DEPOSITING ELECTRONIC CERAMIC OXIDE THIN FILMS WITH CONTROLLED OXYGEN STOICHIOMETRY ON DIFFERENT SUBSTRATE MATERIALS

摘要

1. A process for coating electronic ceramic oxide thin films of materials on substrates such as, Si, Si with buffered layers (Pt/TiCVSiCVSi), lanthunum aluminate, platinized MgO and ytteria stabilized zirconia comprising, (a), providing a single phase pure film forming material in a dense disc form at the target position for laser ablation and the said substrate at appropriate distance from the said target in a pulse laser deposition chamber; (b). depositing a thin film of the said film forming material on the said substrate kept in the said pulse laser deposition chamber maintaining the said substrate temperature at 400 - 750 °C and oxygen at 0.1 to 1.0 torr; (c). flooding the said pulse laser deposition chamber with oxygen and allowing to cool it to room temperature on attaining the required thickness of the said thin film.