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ASSAY OF FLOW AMOUNT OF PROCESS GAS IN WAFER MANUFACTURING SYSTEM AND DEVICE AND METHOD FOR SAID ASSAY

机译:晶圆制造系统中工艺气体流量的测定,装置及方法

摘要

The disclosure relates to a semi-conductor wafer processing system (10) which includes a reaction chamber (12) for containing a wafer (12W) to be processed, pump (14) for reducing pressure within the chamber during processing and a plurality of process flow controllers (16) for providing a constant flow of process reaction gas into the chamber. The flow of process gas used is verified against the known flow of a verification gas using a derivative of the ideal gas law: n'pro = (P'pro/P'ver) n'ver where n'pro is the flow rate of the process gas, n'ver is the flow rate of the verification gas, P'pro is the rate of change with respect to time of the process gas pressure entering the chamber, and P'ver is the rate of change with respect to time of the verification gas pressure entering the chamber. The volume and temperature are maintained constant during the verification procedure. IMAGE
机译:本公开涉及一种半导体晶片处理系统(10),其包括用于容纳要处理的晶片(12W)的反应室(12),用于在处理期间降低腔室内压力的泵(14)以及多种处理方法流量控制器(16),用于向过程室中提供恒定的过程反应气体流量。使用理想气体定律的导数,对照已知的验证气体流量验证所使用的工艺气体流量:n'pro =(P'pro / P'ver)n'ver其中n'pro是过程气体,n'ver是验证气体的流量,P'pro是进入室中的过程气体压力相对于时间的变化率,P'ver是相对于时间的变化率进入腔室的验证气体压力的百分比。在验证过程中,体积和温度保持恒定。 <图像>

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