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Sintered silicon carbide prod. - made by molten silicon infiltration into pressed or moulded elementary carbon@ part

机译:烧结碳化硅产品。 -通过熔融硅渗透到压制或模制的基本碳@零件中制成

摘要

Sintered silicon carbide prod. prodn. involves infiltrating molten silicon into a pressed or moulded part contg. at least 9 wt.% elementary carbon at 1450-2500 deg.C in an inert atmos. under reduced pressure, the Lc(002) value (i.e. domain length perpendicular to the C (002) surface of the elementary carbon) being up to 100 nm. Also claimed are (i) a sintered silicon carbide product which has been produced by a process involving infiltration of molten silicon into a pressed or moulded part of elementary carbon having an Lc (002) value of up to 100 nm; and (ii) sintered silicon carbide product which contains silicon carbide, silicon and up to 1 wt.% (based on sum of SiC + Si) of elementary carbon and which has been produced by a process involving infiltration of molten silicon into a pressed or moulded part of elementary carbon. USE/ADVANTAGE - The prod. is useful as a shelf for hodling ceramic materials in a rapid firing kiln or as a central tube in a furnace for firing semiconductors. It has good thermal cycling resistance and oxidn. resistance
机译:烧结碳化硅产品。产品涉及将熔融的硅渗入压制的或模制的零件中。在惰性气氛中在1450-2500℃下至少9 wt。%的元素碳。在减压下,Lc(002)值(即垂直于基本碳的C(002)表面的畴长)最大为100 nm。还要求保护(i)一种烧结的碳化硅产品,其通过包括使熔融的硅渗透到Lc(002)值最高为100nm的元素碳的压制或模制部分中的方法生产; (ii)烧结的碳化硅产品,其包含碳化硅,硅和至多1 wt%(基于SiC + Si的总和)的元素碳,并且已通过涉及将熔融硅渗透到压制或压制过程中的方法生产碳元素的模制部分。使用/优势-产品。可用作快速烧窑中的陶瓷材料存放架,或用作半导体烧成炉中的中心管。它具有良好的抗热循环性和抗氧化性。抵抗性

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