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Silicon carbide sintered body, manufacturing method of silicon carbide sintered body, firing jig, firing furnace and metal molten metal holding furnace

机译:碳化硅烧结体,碳化硅烧结体的制造方法,烧成夹具,烧成炉及金属熔液保持炉

摘要

PROBLEM TO BE SOLVED: To provide a silicon carbide sintered compact excellent in thermal impact resistance, strength, high temperature strength and oxidation resistance, a method for producing the silicon carbide sintered compact, a firing fixture, a firing furnace, and a molten metal holding furnace.SOLUTION: Provided is a silicon carbide sintered compact, where, in the particle size distribution of silicon carbide, the value of the 1/3 of the maximum particle diameter D99 of the silicon carbide is defined as the standard particle diameter Dp, further, the range in which the particle diameter is O mm to Dp is defined as the first range, the range in which the particle diameter is above Dp to a value double the Dp or lower is defined as the second range, and the range in which the particle diameter is a value higher than the double the Dp to D99 is defined as the third range, the particles of 10 to 40% are present in the first range, also, the particles of 10 to 40% are present in the third range, the particles of 10 to 40% are present in the first range, the particles of 10 to 40% are present in the third range, and also, the total of the particles present in the first range and the third range is 34% or higher.SELECTED DRAWING: Figure 5A
机译:解决的问题:为了提供耐热冲击性,强度,高温强度和抗氧化性优异的碳化硅烧结体,碳化硅烧结体的制造方法,烧成夹具,烧成炉和熔融金属保持体解决方案:提供了一种碳化硅烧结体,其中,在碳化硅的粒度分布中,将碳化硅的最大粒径D99的1/3的值定义为标准粒径Dp,并且将粒径为Omm〜Dp的范围定义为第一范围,将粒径大于Dp且为Dp的两倍以下的范围定义为第二范围,将其中粒径大于Dp至D99的两倍的值定义为第三范围,在第一范围内存在10至40%的颗粒,并且在范围内存在10至40%的颗粒在第三范围内,在第一范围内存在10至40%的颗粒,在第三范围内,存在10至40%的颗粒,并且在第一范围和第三范围内存在的颗粒的总数为34 %或更高。选定的图纸:图5A

著录项

  • 公开/公告号JP6343234B2

    专利类型

  • 公开/公告日2018-06-13

    原文格式PDF

  • 申请/专利权人 三井金属鉱業株式会社;

    申请/专利号JP20140254543

  • 发明设计人 梶野 仁;岡本 大;

    申请日2014-12-16

  • 分类号C04B35/565;F27D1/00;F27D3/12;

  • 国家 JP

  • 入库时间 2022-08-21 13:09:26

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