Electrically erasable and programmable non-volatile semiconductor memory device

摘要

Where an electrically erasable and programmable non-volatile semiconductor memory element (EEPROM cell) for storing a setting and releasing of the software data protection has already been set in the logic state designating the software data protection setting state, and operation of setting the logical state designating the software data protection setting is not applied to the EEPROM cell even if the address and data for setting the software data protection is input. Further, where the logic state designating the releasing of the software data protection has been set in the electrically erasable and programmable non- volatile semiconductor memory element, the operation of setting the logical state designating the release of the software data protection is not set to the EEPROM cell, even if the address and the data for releasing the software data protection is input.