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Process for making thin film silicon-on-insulator wafers employing wafer bonding and wafer thinning
Process for making thin film silicon-on-insulator wafers employing wafer bonding and wafer thinning
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机译:利用晶片键合和晶片薄化制造薄膜绝缘体上硅晶片的方法
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摘要
A very thin silicon film SOI device can be made utilizing a bond and etch-back process. In the presently claimed invention, boron dopant is introduced into a surface of a silicon device wafer and the doped surface is bonded onto another silicon wafer at an oxide surface. The device wafer is thinned by etching down to the doped region and, by subsequent annealing in hydrogen, boron is diffused out of the silicon surface layer to produce very thin SOI films.
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