The mask structure for lithography and the photo lithography process manner null which uses

摘要

PURPOSE:To perform alignment and gap setting with a high precision by irradiating energy rays through a through hole provided in a mask material holding thin film to detect reflection from material to be worked in the state of less scattering and absorption. CONSTITUTION:Plural perforations 5 piercing a holding this film 2 from the front face to the rear face are provided in positions where mask materials 1 are not given. An electron beam is irradiated to perforations 5 from above while moving a mask structure body 13 right and left relatively to a semiconductor wafer 10, and secondary electrons generated from the semiconductor wafer 10 are detected. In this case, the detection value of secondary electrons is different between the presence and the absence of an alignment mark, and this detected value is an 3extreme value when perforations 5 of the mask structure body 13 are arrangned accurately with respect to a scribe line 12 of the semiconductor wafer. Similar detection is performed for plural perforations 5 to position relatively the semiconductor wafer 10 and the mask structure body 13 accurately.