The mask structure for lithography and the photo lithography process manner null which uses

摘要

PURPOSE:To set an alignment and a gap with a material to be worked in high accuracy by providing a through hole which can pass an energy beam at a position corresponding to a scribing line of the material. CONSTITUTION:An electron beam is emitted from above to a pore 5 while moving a mask structure 13 relatively rightward or leftward to a semiconductor wafer 10 to detect secondary electrons generated from the wafer 10. In this case, the detected value of the electrons is different according to the presence or absence of an alignment mark, and the disposition of the pore 15 of the structure 13 when the detected value is maximum is in the state that the pore 15 of the structure 13 is disposed accurately to the scribing line 12 of the wafer. The relative positional relationship between the wafer 10 and the structure 13 can be set accurately by detecting a plurality of pores 5. The electron beam which has passed the pore 5 is measured in case of measuring a gap. Thus, an alignment and the gap can be set in high accuracy.