SIMULATION DEVICE AND METHOD FOR MAGNETRON SPUTTERING AS WELL AS METHOD FOR DESIGNING MAGNETIC SPUTTERING DEVICE USING THE METHOD

摘要

PURPOSE: To shorten the time for analyzing target erosion and to analyze the distribution of the film thickness of resulted thin films by providing the magnetron sputtering device with a simulation device consisting of a specific mechanism. ;CONSTITUTION: One or more kinds of data including data on distributions of magnetic field and electric field, sputtering rate of the target, coefft. of secondary electron release, properties of inert gases, such as Ar, conditions for discharge by sputtering, etc., are inputted to the simulation device and the loci of the plural electrons are calculated in accordance with the data mentioned above in the magnetron sputtering device. Further, the release position and speed of sputtered particles are calculated in accordance with the erosion shape of the calculated target to calculate the thin film on the substrate. The results of the calculation of the erosion shapes and thin film are recorded, at need. The calculation is speeded up by calculating the plural electron loot by a vector treatment. The time for analyzing the simulation of the target erosion distribution of the sputtering device having the three-dimensional rectangular shapes of intricate shapes is shortened.;COPYRIGHT: (C)1994,JPO