NON-VOLATILE FERROELECTRIC MEMORY DEVICE, NONVOLATILE FERROELECTRIC MEMORY ARRAY DEVICE, AND FORMATION OF THE MEMORY ARRAY DEVICE

摘要

PURPOSE: To eliminate noise interference and to reduce a memory size by providing a set of first and second word line and plate line being separated by an insulation layer each other, connecting the first word line to the control electrode of a transistor, and connecting the second plate line to the second plate of a ferroelectric capacitor. ;CONSTITUTION: A word line and a plate line that match a first pair in terms of position and has a word line A and a straight line that passes through a plate line 48b and the gate electrode of column 1, column 3, and column 5 and the capacitor of each cell in column 2 and column 4. On the other hand, with the word line and the plate line of a second pair, a second word line B and a plate line 48a are extended in the same direction as the word line and the plate line of the first pair and are separated each other in upper and lower directions by an insulation layer, so that they are connected to either the first word line A and the second plate line 48a or the second word line B and the first plate 48b, thus reducing a noise interference and a memory area.;COPYRIGHT: (C)1994,JPO