Ion beam effect on Ge-Se chalcogenide glass films: Non-volatile memory array formation, structural changes and device performance

摘要

EmailPrintRequest PermissionsTweetIn this work a scheme for fabricating a conductive bridge non-volatile memory arrays, using ion bombardment through a mask, is demonstrated. Blanket films and devices have been created to study the structural changes, surface roughness and device performance. Ar+ ions interaction on thin films of GexSe1−x system have been studied using Raman Spectroscopy, Atomic Force Microscopy (AFM) and Energy Dispersive X-Ray Spectroscopy (EDS). The performance of the memory devices has been analyzed based on the formation of vias and damage accumulation due to Ar+ ion interactions with GexSe1−x(x=0.25, 0.3 and 0.4) thin films of chalcogenide glasses (ChG). This method of devices/arrays fabrication provides a unique alternative to conventional photolithography for prototyping redox conductive bridge memory without involving any wet chemistry.