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Utilizing polarization-selective mode shaping by chalcogenide thin film to enhance the performance of graphene-based integrated optical devices

机译:利用硫族化物薄膜的偏振选择模式整形来增强基于石墨烯的集成光学器件的性能

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摘要

High refractive index (RI) thin films are capable of pulling waveguide mode profiles towards themselves. In this study, it is shown that by applying high RI coatings with specific thicknesses on the side of optical waveguides, significantly different mode profiles for orthogonal polarizations can be achieved. This phenomenon, that we call it polarization-selective mode shaping, can be extensively used in the enhancement of polarization-dependent integrated optical devices. As an illustrating application, a tri-layer structure consisting of poly(methyl methacrylate)/graphene/chalcogenide on a side-polished fiber is designed to realize an extremely high extinction ratio polarizer. This structure changes the mode profiles in a way that the attenuation of TE mode is maximized, while the power carried by the TM mode remains relatively constant. Simulations and experimental characterizations confirm that polarization-selective mode shaping coordinates four loss mechanisms to maximize the extinction ratio and minimize the insertion loss of the polarizer. The fabricated polarizer is examined in the O, C, and L telecommunication frequency bands. This configuration achieves the high extinction ratio of 51.3 dB and its maximum insertion loss in the tested wavelengths is 1.79 dB. The proposed polarizer has been compared with other state-of-the-art polarizers in the conclusion section which shows its superiority.
机译:高折射率(RI)薄膜能够将波导模式轮廓拉向自身。在这项研究中,表明了通过在光波导的侧面上涂覆具有特定厚度的高RI涂层,可以实现明显不同的正交偏振模轮廓。这种现象,我们称之为偏振选择模式整形,可以广泛用于增强偏振相关的集成光学设备。作为说明性应用,设计了在侧抛光纤维上由聚(甲基丙烯酸甲酯)/石墨烯/硫族化物组成的三层结构,以实现极高的消光比偏振器。这种结构以使TE模式的衰减最大的方式改变模式轮廓,而TM模式所承载的功率保持相对恒定。仿真和实验表征证实,偏振选择模式整形协调了四个损耗机制,以最大程度地减小消光比并最小化偏振器的插入损耗。在O,C和L电信频段中检查制造的偏振器。这种配置实现了51.3 dB的高消光比,在测试波长下其最大插入损耗为1.79 dB。结论部分将拟议的偏振片与其他最新偏振片进行了比较,显示了其优越性。

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