GaAs ELECTRICAL CIRCUIT DEVICES WITH LANGMUIR-BLODGETT INSULATOR LAYER

摘要

A GaAs circuit structure is described which interposes a Langmuir-Blodgett (L-B) layer between the substrate and a conductive contact. The thickness of the layer is controlled to determine the operating characteristics of the device. The L-B layer has been found to both increase the gate barrier height for an FET, and to passivate dangling bonds and surface defects in the GaAs substrate to enable inversion mode operation. Specific FET and diode devices are described.