ETCHANT USED FOR ETCHING POROUS SILICON, ETCHING METHOD USING IT, AND MANUFACTURE OF SEMICONDUCTOR BASE USING IT

摘要

PURPOSE:To etch a porous Si uniformly and effectively without contamination in a semiconductor process, to accurately and selectively remove a porous Si which is formed on the same substrate together with a non-porous Si by etching, and to form an Si crystal layer excellent in crystallinity on an insulating substrate. CONSTITUTION:A mixed solution of hydrofluoric acid, buffered hydrofluoric acid and/or alcohol, and hydrogen peroxide water is used as etchant to etch a porous silicon, an etching method is carried out by use of this etchant, and a semiconductor substrate is manufactured with this etchant.