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ETCHING METHOD SILICON ETCHANT USED IN THE SAME AND METHOD OF MANUFACTURING SEMICONDUCTOR SUBSTRATE PRODUCT

机译:相同方法中使用的硅蚀刻剂及其制造半导体基质产品的方法

摘要

(assignment) A silicon etching solution capable of accurately and rapidly removing silicon or the like with respect to polycrystalline silicon and / or amorphous silicon and capable of maintaining the remaining electrode members and the like without damaging them, an etching method using the same, and a semiconductor substrate product using the same . (Solution) A silicon etchant containing an anionic group and having 3 or more carbon atoms and a nitric acid and hydrofluoric acid in an aqueous medium is prepared and the silicon etchant is applied to a silicon film made of polycrystalline silicon and / or amorphous silicon to form a concave- / RTI
机译:(分配)一种硅蚀刻溶液,使用其的蚀刻方法,该硅蚀刻溶液能够相对于多晶硅和/或非晶硅准确且快速地去除硅等,并且能够在不损坏它们的情况下保持其余的电极构件等。使用该半导体衬底产品。 (解决方案)制备在水性介质中包含具有3个以上碳原子的阴离子基团和硝酸和氢氟酸的硅蚀刻剂,并将该硅蚀刻剂施加到由多晶硅和/或非晶硅制成的硅膜上,形成凹面-/ RTI>

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