METHOD FOR MANUFACTURING DIELECTRIC INSULATION FILM ON CHARGE ACCUMULATION PART OF SEMICONDUCTOR DEVICE

摘要

PURPOSE: To provide a method for forming a dielectric insulation film on a charge accumulation part of a semiconductor device where a natural oxide film thickness in a furnace is uniform and the natural oxide film thickness can be controlled. ;CONSTITUTION: The method comprising a step of forming a lower electrode 11 further comprises steps of loading a wafer by a low pressure CVD device, leaving it in an oxygen atmosphere inside a furnace, at the same time controlling the temperature and time during that time, and forming lower SiO₂ film 12 with a specific film thickness on the charge accumulation part of the semiconductor device.;COPYRIGHT: (C)1994,JPO