INSULATION FILM FOR SEMICONDUCTOR INTEGRATED CIRCUIT, METHOD FOR MANUFACTURING INSULATION FILM, CHARGE ACCUMULATION ELEMENT, NON-VOLATILE MEMORY ELEMENT, AND INSULATION GATE TYPE TRANSISTOR

摘要

PURPOSE: To improve the characteristics of a semiconductor integrated circuit using an insulation film with improved insulation property. ;CONSTITUTION: A dielectric layer consisting of SiO₂ insulation films 2 and 4 and Si₃N₄ insulation film is formed between conductors 1 and 5 in a charge accumulation element. Aluminum is diffused to the SiO₂ insulation films 2 and 4 and Si₃N₄ insulation film and sialon layer is formed at that boundary region. The insulation characteristics of the sialon layer enable the dielectric film thickness of the charge accumulation element to be thin and a high dielectric constant of sialon enables the capacity of the charge accumulation element to be improved.;COPYRIGHT: (C)1995,JPO