LOW-DIELECTRIC CONST. RESIN COMPSN., METHOD OF FORMING LOW-DIELECTRIC CONST. INSULATION FILM AND MANUFACTURING SEMICONDUCTOR DEVICE

摘要

PROBLEM TO BE SOLVED: To provide an insulation film material having a superior heat resistance and low dielectric const. by means that a low dielectric const. resin compsn. for insulation films of a semiconductor device contains an Si-based porous film material and low dielectric const. film material. ;SOLUTION: The low dielectric const. resin compsn. for insulation films of a semiconductor device contains as an Si-based porous film material at least one of alkoxysilane polymers shown by a general formula RpSi(OR)4-p, pref. at least one of alkoxysilane compd. polymers shown by a general formula 1-10 wt.% and diluent wherein R is alkyl group, including substd. groups, R' is alkyl group, p is 0, 1 or 2, and when p is 2, R may be the same or different from each other. Thus it is possible to form a low dielectric const. insulation film having a low dielectric const. and superior heat resistance, resulting in that the capacitance between wirings is remarkably reduced and a semiconductor device superior in heat resistance is obtd.;COPYRIGHT: (C)2000,JPO