PURPOSE:To enable accurate approximation in a short time by projecting oblique ion implantation conditions from a three-dimensional space to a two-dimensional space, and performing oblique ion implantation calculation wherein the rotation angle is considered. CONSTITUTION:Data input I is performed. Oblique ion implantation conditions projection II is performed from a three-dimensional space to a two-dimensional space, and simulation III is performed. Oblique ion implantation calculation wherein the rotation angle is particularly considered is performed. Since the conditions of oblique ion implantation is projected from the three-dimensional space to the two-dimensional space, the oblique ion implantation calculation is enabled. Oblique rotary ion implantation is similarly converted to a plurality of oblique ion implantations, and each of the obhique ion implantation conditions is projected from the three-dimensional space to the two-dimensional space II. Thereby, oblique rotary ion implantation calculation is enabled on a two-dimensional semiconductor impurity simulator.
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