MICROWAVE ENERGIZED DEPOSITION PROCESS WITH SUBSTRATE TEMPERATURE CONTROL

摘要

Substrate temperatures are maintained above 400 DEG C. During the microwave energized glow discharge deposition of Group IV semiconductor materials. The substrate temperature range provides for the preparation of materials having improved electrical properties. Cell efficiency of a photovoltaic device of the p-i-n type is significantly improved by depositing the intrinsic layer using a microwave generated plasma and a substrate temperature in excess of 400 DEG C. Maximum cell efficiency occurs for depositions carried out in the range of 400 DEG -500 DEG C.