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Growth of II VI laser diodes with quantum wells by atomic layer epitaxy and migration enhanced epitaxy
Growth of II VI laser diodes with quantum wells by atomic layer epitaxy and migration enhanced epitaxy
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机译:通过原子层外延和迁移增强的外延生长具有量子阱的II VI激光二极管
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摘要
A method for using atomic layer epitaxy (ALE) and/or migration enhanced epitaxy (MEE) to grow high efficiency quantum wells in II-VI laser diodes. The substrate and previously grown layers of the laser diode are heated to a temperature less than or equal to about 200 C. in an MBE chamber. Sources of Cd, Zn, and Se are injected alternately into the chamber to grow a short-period strained-layer superlattice (SPSLS) quantum well layer including overlaying monolayers of Cd, Zn and Se. The quantum well layer is described by the notation [(CdSe).sub.m (ZnSe).sub.n ].sub.p where m, n and p are integers.
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