Insulating film of semiconductor device, coating liquid for forming insulating film, and manufacturing method of insulating film

摘要

It is of course possible to obtain a good film quality, and to provide an insulating film of a semiconductor device having excellent embedding characteristics, thick film and flatness at the same time, a coating liquid for forming an insulating film for forming the insulating film, and a method of manufacturing the insulating film . On the semiconductor substrate (1) having a step, a general formula is obtained by CO hydrolysis of a triacoxysilane of SiH (or) 3, a methyltrialkoxysilane of sich3 (or) 3, and a general formula of a tetraalkoxysilane of Si (or) 4, and the solution of the polymer is the principal component After the coating liquid for forming an insulating film is coated and dried, the film is heated and hardened in an inert gas atmosphere, thereby forming an insulating film (6) comprising a silane compound having a general formula of sihx (CH3) yo2. Sup. 2 - (x + y) / 2 (but 0 x 1,0 y 1, x + y u2266 1).