High gain monolithic microwave integrated circuit amplifier

摘要

Linear high gain (greater than 20 dB) and high power (greater than +20 dbm) devices for RF power amplifiers are achieved using either fully monolithic or hybridized versions of silicon MMIC two-stage cascaded amplifiers. The device features three feedback loops in conjunction with a DC biasing network. Resistor-capacitor feedback circuits utilize only two capacitiveelements Cblock, Cf6 which are provided as a single three-terminal element having a common lower plate.