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HIGH-GAIN MONOLITHIC MICROWAVE INTEGRATED CIRCUIT AMPLIFIER

机译:高增益全集成微波放大器

摘要

PURPOSE: To actualize a cascade type amplifier which has high gain, high output, and broad frequency response by a monolithic integrated circuit. ;CONSTITUTION: A linear high-gain (≥20dB) and high-power (≥+20dBm) for an RF power amplifier is constituted by using a completely monolithic or hybrid silicon MMIC two-stage cascade type amplifier. This device has three feedback loops in relation to a DC bias circuit. A resistance-capacitor feedback circuit uses merely two capacitive elements Cfb and Cblock, which are provided as a single three-terminal element having a common lower plate.;COPYRIGHT: (C)1993,JPO
机译:目的:通过单片集成电路实现具有高增益,高输出和宽频率响应的级联型放大器。组成:用于RF功率放大器的线性高增益(≥20dB)和高功率(≥+ 20dBm)是通过使用完全单片或混合硅MMIC两级级联型放大器构成的。该设备具有三个与直流偏置电路有关的反馈环路。电阻-电容反馈电路仅使用两个电容元件C fb 和C block ,这些电容元件作为具有公共下板的单个三端子元件提供。 1993年,日本特许厅

著录项

  • 公开/公告号JPH05251963A

    专利类型

  • 公开/公告日1993-09-28

    原文格式PDF

  • 申请/专利权人 SGS THOMSON MICROELECTRON INC;

    申请/专利号JP19920153196

  • 发明设计人 OSIKA DAVID M;GREEN RONALD P;

    申请日1992-06-12

  • 分类号H03F3/60;H03F1/34;H03F3/195;

  • 国家 JP

  • 入库时间 2022-08-22 05:17:04

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