Etch pattern formation method through photolithography process

摘要

The present invention relates to a method of forming an etching pattern through a photolithography process, the method comprising: forming a mask layer 22 having a high etching selectivity on an upper portion of a film 21 and 35 to be patterned; Forming a photoresist pattern 23 on the mask layers 22 and 36 through a lithography process, and then selectively etching the mask layers 22 and 36; By selectively etching the mask layers 22 and 36 to form the pattern as an etch mask, the present invention uses a separate mask having a high etching selectivity in addition to the photoresist mask, so that the photoresist is inclined or notched. Even if is generated, since the mask serves as a mask having a selectivity of 5 times or more than the photoresist mask, it is possible to prevent thinning of the conductive film, notches, and short circuits, and to easily control the line width.