首页> 外文会议>Lithography Asia 2009 >Litho-freeze-litho-etch (LFLE) enabling dual wafer flow coat/develop process and freeze CD tuning bake for >200wph immersion ArF photolithography double patterning
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Litho-freeze-litho-etch (LFLE) enabling dual wafer flow coat/develop process and freeze CD tuning bake for >200wph immersion ArF photolithography double patterning

机译:光刻-光刻-蚀刻(LFLE),可进行双晶片流涂/显影工艺,并进行CD固化烘烤,以进行200wph以上的浸入式ArF光刻双图案化

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摘要

The SOKUDO DUO track system incorporates a dual-path wafer flow to reduce the burden on the wafer handling unit and enables high-throughput coat/develop/bake processing in-line with semiconductor photolithography exposure (scanner) equipment. Various photolithography-based double patterning process flows were modeled on the SOKUDO DUO system and it was confirmed to be able to process both Litho-Process-Litho-Etch (LPLE) and negative-tone develop process wafers at greater than 200 wafer-per-hour (wph) capability for each litho-pass through the in-line exposure tool. In addition, it is demonstrated that Biased Hot Plates (BHP) with "cdTune" software improves litho pattern #1 and litho pattern #2 within wafer CD uniformity. Based primarily on JSR Micro materials for Litho-Freeze-Litho-Etch (LFLE) the coat, develop and bake process CD uniformity improvement results are demonstrated on the SOKUDO RF3S immersion track in-line with ASML XT:1900Gi system at IMEC, Belgium.
机译:SOKUDO DUO跟踪系统结合了双路径晶片流,以减轻晶片处理单元的负担,并实现与半导体光刻曝光(扫描仪)设备一致的高通量涂覆/显影/烘烤处理。在SOKUDO DUO系统上对各种基于光刻的双图案化工艺流程进行了建模,并证实能够以大于200个晶圆/片的速度同时处理光刻工艺和光刻工艺(LPLE)和负片显影工艺晶圆。在线曝光工具每次光刻时的小时(wph)能力。另外,证明了带有“ cdTune”软件的偏置热板(BHP)改善了晶圆CD均匀性内的光刻图案#1和光刻图案#2。比利时IMEC的SOKUDO RF3S浸入式磁道与ASML XT:1900Gi系统在线显示,主要基于JSR Micro用于光刻-冷冻-光刻(LFLE)的材料,对涂层,显影和烘烤过程的CD均匀性进行了改善。

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