Method and apparatus for thin film formation by chemical vapor deposition

摘要

Powdered Cr (CO)₆Is stored in the reservoir, and Ar gas, which is flow-controlled by the flow controller, is introduced into the reservoir. On the other hand, He gas whose molecular weight differs from Ar gas is also introduced into the reservoir under flow control by another flow controller. The Ar and He gases are used as a carrier gas for supplying the reaction gas into the chamber. The reservoir contains powdered Cr (CO₆). The Cr (CO)₆Is carried by the Ar and He gases introduced into the reservoir and supplied on the substrate in the chamber. The substrate is irradiated with a laser beam. By irradiation with a laser beam, Cr (CO)₆To form a metal chromium thin film on the substrate.