首页> 外国专利> CHEMICAL VAPOR DEPOSITION DEVICE, GUIDE MEMBER FOR THE CHEMICAL VAPOR DEPOSITION DEVICE AND METHOD FOR MANUFACTURING THIN FILM USING THE CHEMICAL VAPOR DEPOSITION DEVICE

CHEMICAL VAPOR DEPOSITION DEVICE, GUIDE MEMBER FOR THE CHEMICAL VAPOR DEPOSITION DEVICE AND METHOD FOR MANUFACTURING THIN FILM USING THE CHEMICAL VAPOR DEPOSITION DEVICE

机译:化学气相沉积设备,化学气相沉积设备的指南成员以及使用化学气相沉积设备制造薄膜的方法

摘要

The entire design and production of chemical vapor deposition apparatus when the recirculating exhaust gas flow phenomenon occurs on the back This configuration can adjust the flow path section between the susceptor and the reaction chamber even if not of the wall is required. The chemical vapor deposition apparatus according to the present invention, the reaction chamber and the chamber is located inside the discharge port is formed, is provided in the reaction chamber and a susceptor in which the substrate is loaded, the discharge of the process gas to the showerhead and discharging the process gas toward the substrate to form a flow path, and a guide member for guiding the process gas to the outlet, the guide member comprises an outer peripheral wall and the chamber provided between the outer periphery of the susceptor. Thin film manufacturing method using a chemical vapor deposition apparatus according to the present invention, comprises the step of replacing a different radius so as to adjust the cross-sectional area of the discharge path having a guide member. The thin film manufacturing method using a chemical vapor deposition apparatus according to the present invention comprises the step of inserting a second guide member between the acceptor and the outer guide member up to regulate the cross-sectional area of the exhaust passage,.
机译:当在背面发生再循环废气流动现象时,化学气相沉积设备的整体设计和生产这种结构可以调节基座和反应室之间的流路截面,即使不需要壁也是如此。根据本发明的化学气相沉积设备,在反应室和位于排放口内部的室中形成,设置在反应室和基座中,在该基座中装载有基板,将处理气体排放至喷淋头和将处理气体向基板排放以形成流路,以及用于将处理气体引导至出口的引导构件,该引导构件包括外周壁和设置在基座的外周之间的腔室。使用根据本发明的化学气相沉积设备的薄膜制造方法,包括以下步骤:更换不同的半径,以便调节具有引导构件的排出路径的横截面积。使用根据本发明的化学气相沉积设备的薄膜制造方法包括以下步骤:将第二引导构件插入到接受器和外部引导构件之间,以调节排气通道的横截面积。

著录项

  • 公开/公告号KR101245769B1

    专利类型

  • 公开/公告日2013-03-20

    原文格式PDF

  • 申请/专利权人

    申请/专利号KR20090068831

  • 发明设计人 한명우;

    申请日2009-07-28

  • 分类号H01L21/205;

  • 国家 KR

  • 入库时间 2022-08-21 16:25:28

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