A method for the preparation of a diaphragm for reduction of particles in a chamber for the physical vapor deposition.

摘要

In a method for preparing a shield (17) for use in a physical vapor deposition process, the shield (17) is sputter-etch cleaned to increase adhesion of deposits in the physical vapor deposition process. The sputter-etch cleaning serves to loosen contamination which may form a diffusion barrier and prevent the deposits from bonding to the shield (17). Also, the sputter-etch cleaning creates a high degree of micro-roughness. The roughness allows for an increase in nucleation sites which minimize the formation of interface voids. In addition to sputter-etch cleaning the shield may be bead blasted. The bead blasting makes the surface of the shield irregular. This enhances interface cracking of deposited material on a microscopic scale, resulting in less flaking.