A method of manufacturing a nonvolatile semiconductor memory device.

摘要

The present invention provides a method of manufacturing a nonvolatile semiconductor memory device comprising a floating gate (203), a control gate (205), source and drain regions (206), and a wiring layer (210) connected to the source or drain region. An insulation film (211) having a flat surface is formed to fill the contact hole for the source or drain region, and an insulation film (212) containing phosphorus is formed on the insulation film (211). IMAGE