首页> 外国专利> ACID DERIVATIVE COMPOUND, HIGH-MOLECULAR COMPOUND, AND PHOTOSENSITIVE RESIN COMPOSITION AND PATTERN FORMATION METHOD USING THE HIGH-MOLECULAR COMPOUND

ACID DERIVATIVE COMPOUND, HIGH-MOLECULAR COMPOUND, AND PHOTOSENSITIVE RESIN COMPOSITION AND PATTERN FORMATION METHOD USING THE HIGH-MOLECULAR COMPOUND

机译:酸衍生化合物,高分子化合物以及使用该高分子化合物的光敏树脂组成和图案形成方法

摘要

PROBLEM TO BE SOLVED: To obtain a high-quality fine pattern at a low exposure by using a high- molecular compd. having structural units derived from a (meth)acrylic acid deriv. having a specific group (e.g. a decanediyl group) as a resin for KrF excimer laser lithography. SOLUTION: A high-molecular compd. having structural units derived from a (meth) acrylic acid deriv. represented by formula I (wherein R1 is H or methyl; R2 is a 7-13C hydrocarbon group having a bridged cyclic hydrocarbon group; R3 is H or a 1-2C hydrocarbon group; R4 is a 1-2C hydrocarbon group; and R5 is a 1-12C hydrocarbon group having a 1-12C alkoxy group, etc.) or a high-moledular compd. represented by formula II (wherein R6 , R8 , and R13 are each the same as R1 ; R7 and R9 are each the same as R2 ; R10 is the same as R3 ; R11 is the same as R4 ; R12 is the same as R5 ; R14 is H or a 1-10C hydrocarbon group; x is 0.1-0.9; y is 0.1-0.7; and z is 0-0.7 provided x+y+z=1) is used together with a photoinduced acid generator for KrF excimer laser lithography. Since the sites represented by formulas III and IV of the compd. represented by formula II can be easily decomposed by an acid, these high-molecular compds. can easily give fine resolvable resist patterns at a low exposure even with a photoinduced acid generator which generates a weak acid.
机译:解决的问题:通过使用高分子化合物在低曝光下获得高质量的精细图案。具有衍生自(甲基)丙烯酸衍生物的结构单元。具有特定基团(例如癸二烷基)作为KrF受激准分子激光光刻的树脂。解决方案:高分子化合物。具有衍生自(甲基)丙烯酸衍生物的结构单元。由式I表示的通式(其中R 1为H或甲基; R 2为具有桥环烃基的7-13C烃基; R 3为H或1-2C烃基; R 4 >是1-2C的烃基; R 5是具有1〜12C的烷氧基等的1〜12C的烃基)或高分子化合物。由式II表示的式(其中R 6,R 8和R 13各自与R 1相同; R 7和R 9各自与R 2相同; R 10与R 3相同; R 11与R 4相同; R 12与R 5相同; R 14为H或1-10C烃基; x为0.1-0.9; y为0.1-0.7; z为0-0.7(如果x + y + z = 1)与光致产酸剂一起用于KrF准分子激光光刻。由于由式III和IV表示的位点被压缩。这些高分子化合物可以容易地用酸分解式II表示的化合物。即使使用产生弱酸的光致产酸剂,也可以在低曝光下轻松提供精细的可分辨抗蚀剂图案。

著录项

  • 公开/公告号JPH09221519A

    专利类型

  • 公开/公告日1997-08-26

    原文格式PDF

  • 申请/专利权人 NEC CORP;

    申请/专利号JP19960234228

  • 申请日1996-09-04

  • 分类号C08F20/28;C07C62/38;C07C69/73;C09D133/14;G03F7/004;G03F7/029;G03F7/033;G03F7/039;H01L21/027;

  • 国家 JP

  • 入库时间 2022-08-22 03:36:22

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