CARBON DENSITY MEASUREMENT OF SILICON CRYSTAL AND CARBON-FREE STANDARD SAMPLE THEREFOR

摘要

PROBLEM TO BE SOLVED: To enable measurement of even a low density of carbon with high precision, by adjusting and controlling the resistivity of a carbon-free standard sample in response to the resistivity of a silicon crystal to be measured. ;SOLUTION: In measurement of the carbon density in a silicon crystal by a Fourier transform infrared spectroscopy, the resistivity of a carbon-free standard sample is adjusted and controlled in response to the resistivity of a silicon crystal to be measured. Thus, since the carbon-free standard sample used as a reference is controlled in doping so as to have a resistivity corresponding to the resistivity of the silicon crystal to be measured, infrared absorption other than infrared absorption by carbon appearing around 600cm^-1 may be offset and the base line may be horizontally stabilized. Thus, the carbon density in the silicon crystal to be measured may be measured with high precision from an infrared absorption peak to a low density.;COPYRIGHT: (C)1997,JPO