INTERFACE STATE DENSITY MEASUREMENT, INTERFACE STATE DENSITY MEASURING DEVICE AND STANDARD SAMPLE FOR MEASUREMENT

摘要

PURPOSE: To measure the interface state density of a silicon substrate in a non-processed, non-contact way. ;CONSTITUTION: The interface state density of a silicon substrate to be measured is found from the proportional constant between the value of the second power of the reciprocal of the thickness of the silicon substrate and the value of the reciprocal of the carrier life time, on the basis of correspondence of the proportional constant between the value of the second power of the reciprocal of the thickness of the silicon substrate and the value of the reciprocal of the carrier life time with the interface state density of the silicon substrate. By thus measuring the interface state density of the silicon substrate using microwave photoconductive attenuation, in-line measurement can be easily carried out without being affected by an electrode forming process, back-side ohmic processing and contamination of a sample due to contact with an electrode. Also, the costs for quality check in manufacturing device and processes can be reduced.;COPYRIGHT: (C)1996,JPO