DENSITY OF STATE MEASUREMENTS OF RF POWER, SIF_4, AND CH_4-TUNED-HYDROGENATED MICROCRYSTALLINE SILICON CARBON ALLOY THIN FILMS USING FOURIER TRANSFORM PHOTOCURRENT SPECTROSCOPY (FTPS)

摘要

Hydrogenated microcrystalline silicon carbon alloys (μc-Si_(1-x)C_x:H) could be promising candidates in order to expand the toolbox of useful materials for thin-film photovoltaic devices. μc-Si_(1-x)C_x:H samples were deposited by standard Radio Frequency Plasma Enhanced Chemical Vapour Deposition from a silane and methane gas mixture, highly diluted in hydrogen. In the search for the optimal deposition conditions for the development of this new class of materials, a study of the defect-sensitive electrical properties using photocurrem method was performed. Fourier Transform Photocunent Spectroscopy (FTPS) was performed to investigate the impact of the different deposition conditions on the resulting material properties. Experimental results obtained through FTPS are used to model the density of states of μc-Si_(1-x)C_x:H samples.