MONITORING METHOD OF DEPOSITE IN CHAMBER, PLASMA PROCESSING METHOD, DRY-CLEANING METHOD AND SEMICONDUCTOR MANUFACTURING DEVICE

摘要

PROBLEM TO BE SOLVED: To improve the process control when a machining work is conducted utilized the plasma such as dry etching and plasma CAD, etc. ;SOLUTION: For example, the coupling between the specific atoms, contained in a deposite 11 on the inner wall surface of the chamber 1 formed by the by product of etching, is observed using infrared rays in a dry etching process for example. The incident infrared rays 12, generated by a monitoring light source 8, is made to irradiate on the deposite 11, and suction spectrum of passing infrared rays 13, which passed the deposite 11, are detected by an infrared detector 14. As a result, the correct information in the chamber 1 can be obtained, and the irregularity of etching characteristics and the lowering of the yield rate caused by the generation of particles can be prevented. Also, the operating efficiency of the device can be improved by optimizing the period of maintenance based on the amount of specific change of the respective infrared ray spectrum.;COPYRIGHT: (C)1997,JPO