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Plasma monitoring method, plasma processing method, method of manufacturing semiconductor device, and plasma processing system
Plasma monitoring method, plasma processing method, method of manufacturing semiconductor device, and plasma processing system
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机译:等离子体监视方法,等离子体处理方法,半导体装置的制造方法以及等离子体处理系统
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摘要
Disclosed is a plasma monitoring method for detecting the amount of atomic radicals generated by dissociation of a molecular raw material gas during a plasma processing conducted by introducing the molecular raw material gas and a rare gas into a process atmosphere, wherein the amount of the atomic radicals is predicted from the dissociation degree of the molecular raw material gas determined from the partial pressure of the molecular raw material gas in the process atmosphere, the luminous intensity of the rare gas, and the partial pressure of the rare gas in the process atmosphere, whereby the amount of the specific atomic radicals can be monitored easily and accurately.
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